Samsung, KAIST settle FinFET patent lawsuit

Samsung Electronics and KAIST university has ended their patent lawsuits over FinFET technology.

KAIST has claimed that the South Korean tech giant used the patents of its subsidiary KAIST IP without permission.

FinFET allows semiconductors to use less power while increasing their performance.

The technology was first developed by Seoul National University professor Lee Jong-ho in collaboration with KAIST.

They received patents for the technology in the US ans South Korea in 2001. The patents are managed by KAIST IP.

KAIST filed lawsuits against Samsung, Qualcomm and GlobalFounderies in Teaxs back in November 29, 2016.

Intel paid KAIST licensing fees for using the patents.

In June, 2018, the jury judged that Samsung’s infringement amounted to US$400 million. KAIST IP sued the South Korean tech giant again in February, 2019, claiming that Samsung was continuing to infringe on its patents despite the previous judgment.

KAIST claimed that the South Korea conglomerate’s 14, 11, 10, 8 and 7 nanometer FinFET technology used in its application processors violated its patents.

Smartphones launched from 2016 onward were also added to products that KAIST claimed violated its patents.

In February, the court said Samsung should award KAIST US$200 million.

The pair said they have settled their lawsuit. The terms of their deal weren’t revealed.