Samsung Electronics Announces World's First Development of 1z DRAM ... It has more than a 1 year lead over competitors

Mass production in the second half of this year in earnest

2019-03-22     Yy Lee

Samsung Electronics has developed the third 10-nanometer (1z) DRAM. It has completed the development one year faster than its competitors, succeeding again to be the world's first. Minimizing the process in one step increases the number of chips that can be pulled from a single wafer. It means that the cost will be lowered. If the cost is lower than that of a competitor, it can make relatively more profits.

However, in the industry, Samsung Electronics' development announcement is deemed somewhat unusual. This is because Samsung has been mainly making 'mass production announcements rather than development announcements. It is assumed that the company has announced quickly after completing its development to reverse the negative atmosphere caused by deteriorating memory market conditions. Some analysts said that the decision considered Lee Jae-Yong (Vice Chairman)'s remarks. When President Moon met with Vice Chairman Lee in January, President Moon asked, "How is it about the semiconductor industry being not good?" And Vice Chairman Lee said, "the true ability comes out during difficult times."

Samsung Electronics has announced that it has developed the world's first 3-generation 10-nanometer (1z) 8 Gigabit (Gb) DDR4 (Double Data Rate 4) DRAM. It plans to start mass production in the second half of the year. Next year, the company will supply the next generation 1z DRAM (DDR5, LPDDR5) with higher performance and capacity.

This development has been completed only 16 months after the mass production of 2nd generation 10nm (1y) DRAM occurred. 1z DRAM improved productivity by more than 20% compared to existing 1y DRAM without the use of ultra-high-intensity ultraviolet (EUV) equipment. The speed increase also improved power efficiency. The 1z DRAM-based PC DDR4 module has passed all the evaluation criteria of global central processing unit (CPU) vendors.

Lee Jung-Bae, vice president of DRAM development division of Samsung Electronics Memory Division, said, "We have launched the next-generation lineup of high-speed and ultra-low-power devices with the development of DRAM technology that overcomes the limitations of microprocessing. We will contribute to the rapid growth of the premium memory market. "

Samsung Electronics is continuing to expand its production of flagship products in the Pyeongtaek DRAM line as its global IT customer demand increases. To further expand demand for next-generation premium DRAMs in 2020, the company plans to establish a stable mass production system in Pyeongtaek for the "super-gap" strategy.