UPDATED. 2024-02-27 09:17 (화)
Samsung aims to produce GAA 2nm chips in 2025
Samsung aims to produce GAA 2nm chips in 2025
  • Jang Keyoung Yoon
  • 승인 2021.10.07 14:51
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Firm also develops new 17nm FinFET process
Image: Samsung
Image: Samsung

Samsung is planning to produce 2-nanometer (nm) chips based on gate all around (GAA) in 2025.

It is also planning to start manufacturing GAA 3nm chips in June next year, the company said on Wednesday.

At Samsung Foundry Forum held online, the South Korean tech giant also shared that it has developed a new 17nm FinFET process.

GAA, unlike FinFET that uses three surfaces as current channels, uses four surfaces.

This allows the chips to have a more precise current controlling ability, increased power efficiency and to be designed smaller.

Samsung’s own GAA technology for its 3nm chip is called multi bridge channel FET.

This will increase performance by 50%, reduce power efficiency by 50% and make chips 35% smaller compared to 5nm ones, the company claimed.

Samsung has secured a stable yield rate for its 3nm chips, it added.

At the same time, the company will offer its new 17nm process for production of image sensors, mobile display driver ICs and other chips currently made with 28nm process.

Samsung will also develop various options using 14nm process that can be used to manufacture micro controller units, it added.

It will also offer its 8nm platform for mmWave RF chips, the company also said.

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