Eugenetec is currently developing a titanium nitride atomic layer deposition (TiN-ALD) equipment for application in 10-nanometer (nm) DRAM production, TheElec has learned.
The equipment is used to form the electrode films of the capacitors in DRAM.
Eugenetec began development for the new equipment late last year, sources said.
TiN is highly conductive and is used as the material for metal barriers in chips that prevent capacitors, oxide films and other materials mixing.
Each cell in DRAM is comprised of a transistor and capacitor. Capacitors are comprised of insulator films and electrode films.
These films are required to be deposited more thinly and uniformly as DRAM sizes continue to shrink.
ALD equipment deposits these film layers at atomic-levels to achieve this. The equipment is replacing chemical vapor deposition and physical vapor deposition equipment in advanced process nodes.
Eugenetec’s compatriots Jusung Engineering and Wonik IPS are already supplying ALD equipment to South Korean memory makers.
Eugenetec also succeeded in supplying its first ALD equipment to Samsung’s DRAM fab last year. The equipment deposits silicon nitride.
