UPDATED. 2024-06-21 07:30 (금)
Samsung begins production of Gen 9 V-NAND with double stack structure
Samsung begins production of Gen 9 V-NAND with double stack structure
  • Noh Tae Min 기자
  • 승인 2024.04.24 08:46
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QLC model to also to start production later in year
Image: Samsung
Image: Samsung

Samsung said on Tuesday that it has begun mass production of 1Tb triple-level cell (TLC) Gen 9 V-NAND.

The chip has a double stack structure, which is in contrast to rival SK Hynix’s Gen 9 V-NAND which is expected to have a triple stack structure.

This means Samsung will have an advantage in cost while offering the same specs.

The Gen 8 V-NAND is expected to have over 280 layers, though Samsung didn’t comment on the number of layers.

The tech giant said it used the smallest cells and thinnest molds to make its Gen 9 V-NAND, which boosted its bit density by 1.5 times compared to its Gen 8 V-NAND.

Dummy channel holes were removed to achieve this, the company said. Samsung also applied interference reduction technology in light of the cells becoming smaller. Cell life has also been extended, the company said.

The latest NAND interface Toggle 5.1 was also applied to increase the data input and output speed by 33% to 3.2Gbps, Samsung said. The chip is also 10% more power efficient.

A quad-level cell (QLC) model of the Gen 9 V-NAND will also go into production in the second half of the year, Samsung added.

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