UPDATED. 2024-06-14 08:17 (금)
Samsung considering applying metal oxide resist in next DRAM
Samsung considering applying metal oxide resist in next DRAM
  • Noh Tae Min 기자
  • 승인 2024.04.30 09:28
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Next-gen photoresist to be procured from Inpria for 1c DRAM
Image: Inpria
Image: Inpria

Samsung was considering applying metal oxide resist (MOR) during the extreme ultraviolet (EUV) lithography process for its next-generation DRAM, TheElec has learned.

MOR is considered the next-generation photoresist (PR) to the chemically amplified resist (CAR) currently used in the lithography of advanced chips. PR reacts to light emitted during the lithography process, which is done to draw the circuit patterns on the wafer.

Samsung is considering using MOR in its Gen 6 10-nanometer (nm) DRAM, or 1c DRAM. The resist will be used on the layers of 1c DRAM that require the finest circuit width.

Inpria is a subsidiary of Japanese material firm JSR and it produces inorganic PR based on tin.

Samsung is planning to use EUV PR on six or seven layers of the 1c DRAM, which will go into production in the second half of the year, sources said.

The tech giant is considering other companies besides Inpria to procure EUV PR, such as Dupont, Dongjin Semichem, Samsung SDI, and others, which are all being tested, they added.

CAR is facing limitations in PR resolution, etching resistance, and line edge roughness.

This is why companies such as Inpria and Lam Research are aiming to develop inorganic PR such as MOR to overcome the current limitations.

Lam Research calls its inorganic PR dry resist, which will likely be supplied starting with Gen 7 10nm, or 1d DRAM, launching next year.

Dry resist draw patterns on the wafer through deposition. Samsung considered its use for 1c DRAM but decided to push it back to 1d DRAM, the sources said.

However, in advanced nodes in foundry, TSMC and others are already using dry resist, they added.

A Samsung spokesperson declined to comment on the matter.


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