Samsung Electronics will begin mass production of an 8-layer DDR5 memory late next year, the company said at chip industry conference Hot chips 33 on Monday.
It will use its through silicon via (TSV) technology for the 512GB DDR5 memory module.
The company had used 4-layer TSV technology for DDR4, making the chip only 1.2mm thin.
The new DDR5 module will be even thinner than that at 1mm despite having 8 layers, Samsung said.
The company used a thinner wafer handling technology to reduce the distances between the dies.
The new DDR5 will also have better cooling function compared to DDR4, Samsung said. This is thanks to application of high-k materials.
It will also apply its own power management IC to reduce noise and have the chip function at a lower voltage.
The DDR5 will have 7.2Gbps data transfer speed. Samsung also applied a technology called decision feedback equalizer to increase the data transfer rate and maintain stable signals.
The module is aimed the data center and server markets, the company added.