SK Hynix said on Wednesday that it has developed a 238-layer NAND flash chip.
The sample of the chip will be provided to its customer while mass production is expected to start next year.
It has six more layers than the chip unveiled by Micron late last month.
SK Hynix’s 238-layer NAND flash comes in 512Gb triple-level cell and was showcased during Flash Memory Summit at Santa Clara.
The South Korean memory chip maker said its latest NAND comes only a year and seven months after its 176-layer NAND was unveiled in December 2020.
Its NAND had the most layer while being the smallest chip in its class, the company claimed.
Productivity during wafer fabrication has also increased 34% compared to the 176-layer model, SK Hynix said.
The latest NAND also has a data transfer speed of 2.4Gb while power consumption has been reduced by 21% compared to its predecessor.