SK Hynix has unveiled a 321-layer NAND flash at a conference in the US.
The South Korean chip giant unveiled the 321-layer 1Tb triple-level cell NAND flash at Flash Summit 2023 in Santa Clara on Tuesday.
SK Hynix is the first memory chip maker to unveil a NAND with over 300 layers.
The company said its latest NAND has 59% increased productivity compared to its 238-layer 512Gb NAND.
Production of the 321-layer NAND will start in 2025, a chip it explained that meets the demand for high performance and high capacity in the AI era.
SK Hynix also unveiled PCIe Gen 5 interface SSD and UFS4.0 at the conference.