SK Hynix said on Monday that it has given a sample of its HBM3E to a customer.
High bandwidth memory connects DRAM vertically to increase their speed and is currently in high demand from AI applications.
HBM3E is an expansion of HBM3 with a further increased speed of 1.15TB per second.
The South Korean memory chip giant said it expects to start production of HBM3E in the first half of next year and lead in the AI memory market.
According to SK Hynix, it applied advanced MR-MUF in its latest memory chip. The process involves injecting liquid protective material between chips when they are vertically stacked.
The material is more heat and process efficient than film-type protective material and allowed HBM3E to be 10% more efficient in heat discharge.
HBM3E is also compatible with HBM3 systems and can be installed immediately, SK Hynix added.
The new chip is expected to be used in Nvidia’s GH200 GPU.