Samsung Electronics will be launching a wide array of products using 128-layer single-stack Gen-6 3D V-NAND technology, according to Japan-based IT media Watch Impress this week.
It quoted Han Jin-man, Samsung Electronics’ memory business executive who spoke at the Samsung SSD Forum 2019 Tokyo in Tokyo on Nov. 19. “Our goal is to go for 500-plus layers over the next five years,” said Han.
Single-stack requires less processes and materials than double-stack, and is therefore less costly. However, it is far more difficult to achieve. This is why most NAND flash makers use the double-stack technology. Samsung, on the other hand, has the High Aspect Ratio Contact (HARC) technology, based on which it plans to adhere to the single-stack for up to 200-layers.
Meanwhile, Han, introduced solutions based on the Gen-6 3D V-NAND, including the PCle Gen4 SSD ‘PM1733’ that allows for high-speed transmissions of up to 6400MB/s that is customized for cloud technology. The SLC-NAND-based Z-SSD is also faster than the TLC-based SSD, Han said, adding that Samsung is continuing to develop Serial Attached SCSI SSD products to replace HDD.
Han said that Samsung is willing to produce various form factors including its own NF1(NGSFF : Next Generation Small Form Factor.
Also on display was the USF 3.0 product exclusively made for smartphones. The UFS cards are much faster and more stable than microSD cards.
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